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李佩雯(Pei-Wen Li)

工四館 ED617 (54210)
E-mail:pwli@nctu.edu.tw
NCTU: (03)571-2121
FAX: (03)5724361

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簡介

        Pei-Wen Li received the Bachelor degree in Electrophysics from National Chiao-Tung University in 1989, and received the Master and Ph.D. degree in Electrical Engineering from Columbia University in New York in 1991 and 1994, respectively. Her Ph.D. dissertation was focused on the study of low temperature oxidation of SiGe alloys and she has successfully demonstrated the first pure SiGe-channel pMOSFETs “SiGe pMOSFETs with gate oxide fabricated by microwave electron cyclotron resonance plasma”, IEEE Electron Device Letters, vol. 15, p.402-405 (cited time: 46). In 1995, she joined the R/D technology division of Vanguard International Semiconductor Corporation working on the process development and integration of 64M DRAM. Then, she joined I-Shou University as a faculty in the department of Electronic Engineering in 1996, where her research was focused on the characterization of InGaAsN material properties and its application on HEMT and HBT related devices. She joined the department of Electrical Engineering, National Central University as an associate professor in 2000, was promoted to be a professor since August 2005, and served as the department chairman during 2007-2010. Currently she is the associated dean of Academic affairs and the director of the Center for Nanoscience and Technology, National Central University in charge of the core facility for nano fabrication and nano characterization.
        
        Dr. Li’s main research theme focuses on experimental silicon-germanium nanostructures and devices. Her present research encompasses germanium quantum dot single electron transistors, photodetectors, nonvolatile memory, and energy saving (photovoltaic and thermoelectric) devices, making use of self-assembly nanostructures in silicon integration technology. Her research group has successfully developed a novel CMOS-compatible, self-organized approach for the generation of designer germanium quantum dots (desired size, location, and depth of penetration) within Si-containing layers using the control available through lithographic patterning and selective oxidation of nanopatterned silicon-germanium-on-insulator structures. Of particular, the successful demonstration of precise placement and size control of the self-assembled germanium quantum dots shed light on the practical creation of new nano-electronic, nano-photonic, and electromechanical devices.
        
        She has produced the first Ge quantum-dot single electron transistor with self-aligned nanoelectrodes that produces room-temperature Coulomb blockade characteristics with very large peak-to-valley ratio up to 750 and excellent Coulomb stability (“Fabrication of a germanium quantum-dot single electron transistor with large Coulomb-blockade oscillations at room temperatures,” Applied Physics Letters, vol. 85, p. 1532 (2004), “Tunneling spectroscopy of germanium quantum-dot in single-hole transistors with self-aligned electrodes,” Nanotechnology, vol. 18, p. 475402 (2007), “Single Ge quantum dot placement along with self-aligned electrodes for effective management of single charge tunneling,” IEEE Trans. Electron Devices, vol. 59, p. 3224 (2012), and “Designer Ge quantum dot Coulomb blockade thermometry,“Appl. Phys. Lett., vol. 104, 243506 (2014).
        She has also successfully demonstrated size-tunable from near ultraviolet (NUV) to near infrared (NIR) Ge quantum-dot photodetectior in 20122015 (“CMOS-compatible generation of self-organized 3D Ge quantum dot array for photonic and thermoelectric applications,” IEEE Trans. Nanotechnology, vol. 11, no. 4, p. 657-660, “Size tunable Ge quantum dot metal-oxide-semiconductor photodiodes with low dark current and high responsivity for near ultraviolet to visible applications,” Nanoscale, 6 (10), 5303 – 5308, and, “Designer germanium quantum dot phototransistor for near infrared optical detection and amplification,” Nanotechnology, vol. 26, 055203 (2015)).