工四館 ED617 (54210)
- 美國哥倫比亞大學電機博士,Columbia University, Ph.D. in Electrical Engineering, (February 1991－January 1994)
- 美國哥倫比亞大學電機碩士, Columbia University, M.S. in Electrical Engineering, (September 1989－January 1991)
- 交通大學電子物理系學士, National Chiao-Tung University, B.S. Electrophysics, (September 1985－June 1989)
- Professor, Department of Electronic Engineering, National Chiao Tung University, 交通大學電子工程系教授 (February 2015-present)
- Associated Dean, Academic Affair, National Central University,中央大學副教務長 (August 2013-January 2015)
- Distinguished Professor, Department of Electrical Engineering, National Central University, 中央大學電機系特聘教授 (September 2005- January 2015)
- Director, Center for Nano Science and Technology, National Central University, 中央大學奈米科技中心主任 (February 2011 – January 2015)
- Chairman, Department of Electrical Engineering, National Central University,中央大學電機系系主任 (August 2007– July 31, 2010)
- Associate Professor, Department of Electrical Engineering, National Central University (August 2000 – July 2005) and Department of Electronic Engineering, I-Shou University (September 1996 – July 2000). 中央大學電機系與義守大學副教授
- Senior Engineer, DRAM Technology Development Division, Vanguard International Semiconductor Corporation 世界先進積體電路股份有限公司製程整合技術開發部資深工程師 (March 1995 – September 1996)
- Postdoctoral fellowship, Columbia University 美國哥倫比亞大學電機系博士後研究員(February 1994 – January 1995)
- Designer Ge QD self-assembly technique
- Room-temperature Ge QD single electron transistors and charge manipulation/sensing
- Ge QD sensing devices for photonics and thermoelectrics
Pei-Wen Li received the Bachelor degree in Electrophysics from National Chiao-Tung University in 1989, and received the Master and Ph.D. degree in Electrical Engineering from Columbia University in New York in 1991 and 1994, respectively. Her Ph.D. dissertation was focused on the study of low temperature oxidation of SiGe alloys and she has successfully demonstrated the first pure SiGe-channel pMOSFETs “SiGe pMOSFETs with gate oxide fabricated by microwave electron cyclotron resonance plasma”, IEEE Electron Device Letters, vol. 15, p.402-405 (cited time: 46). In 1995, she joined the R/D technology division of Vanguard International Semiconductor Corporation working on the process development and integration of 64M DRAM. Then, she joined I-Shou University as a faculty in the department of Electronic Engineering in 1996, where her research was focused on the characterization of InGaAsN material properties and its application on HEMT and HBT related devices. She joined the department of Electrical Engineering, National Central University as an associate professor in 2000, was promoted to be a professor since August 2005, and served as the department chairman during 2007-2010. Currently she is the associated dean of Academic affairs and the director of the Center for Nanoscience and Technology, National Central University in charge of the core facility for nano fabrication and nano characterization.
Dr. Li’s main research theme focuses on experimental silicon-germanium nanostructures and devices. Her present research encompasses germanium quantum dot single electron transistors, photodetectors, nonvolatile memory, and energy saving (photovoltaic and thermoelectric) devices, making use of self-assembly nanostructures in silicon integration technology. Her research group has successfully developed a novel CMOS-compatible, self-organized approach for the generation of designer germanium quantum dots (desired size, location, and depth of penetration) within Si-containing layers using the control available through lithographic patterning and selective oxidation of nanopatterned silicon-germanium-on-insulator structures. Of particular, the successful demonstration of precise placement and size control of the self-assembled germanium quantum dots shed light on the practical creation of new nano-electronic, nano-photonic, and electromechanical devices.
She has produced the first Ge quantum-dot single electron transistor with self-aligned nanoelectrodes that produces room-temperature Coulomb blockade characteristics with very large peak-to-valley ratio up to 750 and excellent Coulomb stability (“Fabrication of a germanium quantum-dot single electron transistor with large Coulomb-blockade oscillations at room temperatures,” Applied Physics Letters, vol. 85, p. 1532 (2004), “Tunneling spectroscopy of germanium quantum-dot in single-hole transistors with self-aligned electrodes,” Nanotechnology, vol. 18, p. 475402 (2007), “Single Ge quantum dot placement along with self-aligned electrodes for effective management of single charge tunneling,” IEEE Trans. Electron Devices, vol. 59, p. 3224 (2012), and “Designer Ge quantum dot Coulomb blockade thermometry,“Appl. Phys. Lett., vol. 104, 243506 (2014).
She has also successfully demonstrated size-tunable from near ultraviolet (NUV) to near infrared (NIR) Ge quantum-dot photodetectior in 20122015 (“CMOS-compatible generation of self-organized 3D Ge quantum dot array for photonic and thermoelectric applications,” IEEE Trans. Nanotechnology, vol. 11, no. 4, p. 657-660, “Size tunable Ge quantum dot metal-oxide-semiconductor photodiodes with low dark current and high responsivity for near ultraviolet to visible applications,” Nanoscale, 6 (10), 5303 – 5308, and, “Designer germanium quantum dot phototransistor for near infrared optical detection and amplification,” Nanotechnology, vol. 26, 055203 (2015)).