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鄭晃忠(Huang-Chung Cheng)

工四館 ED536
TEL: 886-3-5712121 ext : 54147
FAX: 886-3-5724361
E-mail:hccheng536@mail.nctu.edu.tw

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奈米電子與顯示技術實驗室

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研究方向

簡介

        鄭晃忠博士現為國立交通大學電子工程學系教授。鄭老師於民國66年畢業於台灣大學物理系,之後分別於民國68年與74年自清華大學材料科學工程研究所拿到碩士與博士學位。
        鄭老師為裴陶裴會員,並且多次榮獲國科會優良及甲等研究獎。鄭老師亦曾受邀於國際平面顯示器在民國85至88年於日本舉辦之國際顯示器論壇(IDW)及民國87年於日本舉辦之國際主動式矩陣液晶顯示器研討會(Proceeding of AMLCD)進行演講及擔任論文委員會委員。又許多自此處畢業之研究生,其研究論文榮獲科林論文獎或台灣電子材料與元件協會傑出論文獎。
        鄭老師過去在薄膜電晶體(TFT)、奈米碳管(CNT)、場發射元件、雷射退火、以及奈米結構等技術與應用上有廣泛且深入之研究;近年來在成長不同材料薄膜或奈米線之低溫成長技術上亦有長足發展。鄭老師過去在上述領域中發表了近500篇期刊及研討會論文,並且擁有超過50個國內外專利。鄭老師目前的研究方向主要是高性能薄膜電晶體、新穎奈米線元件、非揮發性記憶體(NVM)、三維元件整合(3D integration)、新穎場發射元件、生醫感測元件、以及光電元件等。
        
        Dr. Huang-Chung Cheng is a professor of Department of Electronics Engineering in National Chiao- Tung University (NCTU). He received the B.S. degree in physics from National Taiwan University (NTU) in 1977, and the M.S. and Ph.D. degrees from the Department of Materials Science and Engineering, National Tsing-Hua University (NTHU), Hsinchu, Taiwan, in 1979 and 1985, respectively.
        Dr. Cheng is a member of Phi Tau Phi Scholastic Honor Society. He has ever received the outstanding research award from the National Science Council for many times. Dr. Cheng was the Invited Speaker and the member of Paper Committee in the International Display Workshops (IDW), Japan, from 1996 to 1999, as well as in the Proceedings of Active-Matrix Liquid Crystal Display (AMLCD), Japan, in 1998. Many postgraduate students here have received Lam Research Thesis Award or EDMA Outstanding Thesis Award.
        Dr. Cheng did extensive and deep work on thin-film transistors (TFTs), carbon nanotubes (CNTs), field emission devices, laser annealing technology, and nanostructures. Recently, he also worked on low- temperature growth technology for thin films or nanowires with numerous materials. In these field, he has published nearly 500 technical papers in international journals and conferences, and also held more than 50 patents. His current research interests are in the areas of high-performance TFTs, novel nanowire devices, non-volatile memories (NVMs), three-dimensional integrations (3D integrations), novel field emission displays, biosensors, and photoelectronic device.