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李建平(C. P. Lee)

工四館 ED607 (54159)
E-mail:cplee@mail.nctu.edu.tw
NCTU: (03)5131589
LAB: (03)5712121-55665
Student Office: (03)5712121-54248 (ED620) or 54240 (ED517)
FAX: (03)5733722 or (03)5724361

個人網頁:

http://140.113.29.148/mbe/index.php

實驗室網頁或詳細履歷:

光電及高速元件實驗室

學經歷

研究方向

簡介

        Prof. Chien-Ping Lee received the B.S. degree in physics from National Taiwan University in 1971 and the Ph.D. degree in applied physics from California Institute of Technology in 1978. While at Caltech, he worked on semiconductor lasers and GaAs-based optoelectronic integrated circuits (OEIC). He was credited with the design and fabrication of the first OEIC circuit in the world.
        
        After receiving the Ph.D.degree, he went to work for Bell Laboratories on semiconductor lasers. He joined Rockwell International Science Center in 1979, and worked on GaAs integrated circuits. He did extensive work on substrate-related effects such as the orientation effect and the backgating effect, which made great impact to the GaAs IC technology. In 1982 he became a Manager with responsibility for the development of ultra-high-speed integrated circuits using high-electron mobility transistors (HEMT). In 1987 he joined the National Chiao Tung University, Hsinchu, Taiwan, as a Professor and Director of the Semiconductor Research Center. He was also the director of the National Nano Device Laboratory in charge of the construction of the first submicrometer device research center in the country. In 1990, he returned to Rockwell to manage the Advance Device Concept Department with the responsibilities for developing advanced optoelectronic devices and Giga bit optical interconnects and networks. He joined the National Chiao Tung University again in 1992. Currently he is a university chair professor in the Electronics Engineering Department and the director of the Center for Nanoscience and Technlogy in charge of the core facility for nano fabrication and nano characterization.
        
        His current research interests are in the areas of semiconductor nanostructures and quantum devices, III-V optoelectronic devices, MBE technology, heterostructure devices and physics, and device simulation.
        
        Dr. Lee received the Engineer of the Year Award from Rockwell in 1982 for his contributions to GaAS IC and HEMT technologies, the best teacher award from the Ministry of education in 1994, the Outstanding engineering professor award from the Chinese Engineers Association in 2000, the Scholar Achievement award from teh Ministry of Education in 2002, and the outstanding research award from the National Science Council in 1993-1997. He was elected an IEEE fellow in 2000.