曾俊元(Tseung-Yuen Tseng)

工程四館 ED608
Office: (03)5731879
LAB: (03)5712121-54201 or -54202 or -54168






        Tseung-Yuen Tseng received his Ph.D. degree in electroceramics from the School of Materials Engineering, Purdue University, West Lafayette, USA in 1982. He was briefly associated with the University of Florida, Gainesville, before joining National Chiao-Tung University, Hsinchu, Taiwan in 1983, where he is now a University Chair Professor in the Department of Electronics Engineering and the Institute of Electronics. He was the Dean of College of Engineering(2005-2007), the Vice Chancellor and University Chair Professor of the National Taipei University of Technology, Taipei, Taiwan(2007-2009).
        Dr. Tseng’s professional interests are electronic ceramics, nanoceramics, ceramic sensors, high-k dielectric films, ferroelectric thin films and their based devices, and resistive switching memory devices. He has published over 300 research papers in refereed international journals and 110 conference papers, several book chapters, and held 28 patents. He invented the base metal multilayer ceramic capacitors, which have become large scale commercial product. He is an Editor of the Handbook of Nanoceramics and Their Based Nanodevices(5-Vol. set) and Nonvolatile Memories: Materials, Devices, and Applications(2-Vol. set), Guest Editor of a special issue of Ferroelectrics(6 Volumes), an Associate Editor of the Journal of Nanoscience and Nanotechnology, Advanced Science Letters and International Journal of Applied Ceramic Technology. He is Member of Board of Asia Ferroelectrics Association and General Chair of The 6th Asian Meeting of Ferroelectrics. He is a Chairperson, Session Chair, Keynote and Invited Speaker, and Member of Advisory Committee of many National and International Meetings. Dr. Tseng has received Distinguished Research Award from the National Science Council (1995-2001), Hou Chin-Tui Distinguished Honor Award (2002), Dr. Sun Yat-Sen Academic Award (2003), TECO Technology Award (2004), IEEE CPMT Exceptional Technical Achievement Award (2005), Distinguished Research Award of Pan Wen Yuan Foundation (2006) , Academic Award of Ministry of Education (2006), Medal of Chih-Hung Lu(2010), and National Endowed Chair Professor(2011) . He was elected a Fellow of the American Ceramic Society in 1998, IEEE Fellow in 2002 and MRS-T Fellow in 2009.
        1. 在電阻式記憶體方面,使用緩衝層將記憶體的單極式轉換的維持時間增長,使其具使用價值,並對其延長機制提出解釋。並採用鉻奈米粒子於電阻轉換層,來降低其轉換電壓使可靠的單極轉換變的可能而且解釋其原因。另使用鋅氧化物奈米線來製作電阻式記憶體,為透明電子提供基礎研究。
        2. 在場發射顯示器方面,使用鎵添加及氧電漿蝕刻技術,製作具奈米尖端的鋅氧化物奈米線來製作場發射顯示器,可得到低啟動電壓及高可靠度的場發射元件。
        3. 在光感測器方面,使用鋅氧化物奈米線成長於透明塑膠基板來製作UV光感測元件,可得高感測性及靈敏的效果。
        發表論文 (2012)
        1. I.C. Yao, P. Lin, and T.Y. Tseng, “Field-emission properties and reliability of ZnO nanorod, nanopagoda, and nanotip current emitters”, IEEE Trans. On Nanotechnology, Vol.11, No.4, pp.746-750, July 2012
        2. I. C. Yao, P. Lin, S.H. Huang and T.Y. Tseng, “Electrical properties and reliability of ZnO-based nanorod current emitters”, IEEE Trans. On CPMT,Vol.2, No.7, pp.1143-1150, July 2012
        3. D.Y. Lee and T.Y. Tseng, “Unipolar resistive switching characteristics of a ZrO2 memory device with oxygen ion conductor buffer layer”, IEEE Electron Device Letters, Vol.33, No.6, 803-805, 2012
        4. K.P. Jayadevan and T.Y. Tseng, “One-dimensional ZnO nanostructures”, Journal of Nanoscience and Nanotechnology, 12, 4409-4457,2012
        5. M.C. Wu, W.Y. Jang, C.H. Lin, and T.Y. Tseng, “A study on low-power,nanosecond operation and multilevel bipolar switching in Ti/ZrO2/pt nonovolatile memory with 1T1R architecture”, Semicond. Sci. Technology, 27, 065010, 2012
        6. T.Y. Tseng and S.M. Sze, “An introduction to nonvolatile memories’ in “Nonvolatile Memories: Materials, Devices, and Applications”, Edited by T.Y. Tseng and S.M. Sze, pp.1-9, Am.Scientific Publishers, CA, 2012
        7. D.Y. Lee, I.C. Yao, and T.Y. Tseng, “Bottom electrode modification of ZrO2 resistive switching memeory device with Au nanodots”, J.J. Appl. Phys.,51, 02BJ04, 2012
        8. I.C. Yao, T.Y. Tseng, and P. Lin, “ZnO nanorods grown on polymer substrates as UV photodetectors”, Sensors and Actuators A, Physical, 178,26,Feb.11, 2012
        9. T.Y. Tseng, “ZnO nanostructures for sensor applications”, Solid State Phenomena, Vol.185, pp.1-4, 2012
        10. I.. Yao, D.Y. Lee, T.Y. Tseng and P. Lin, “Fabrication and resistive switching characteristics of high compact Ga-doped ZnO nanorod thin film devices”, Nanotechnology, Vol.23, 14, 145201, Apr. 2012
        11. D. Panda, C.Y. Huang, T.Y. Tseng, “Resistive switching characteristics of nikel silicide layer embedded HfO2 film”, Appl. Phys. Lett., Vol.100, 11, 112901, Mar. 2012
        12. W.F. Chung, T.C. Chang, C.S. Lin, K.J. Tu, H.W. Li, T.Y. Tseng, Y.C. Chen and Y.H. Tai, “Oxygen-adsorption-induced anomalous capacitance degradation in amorphous indium-gallium-zinc-oxide thin-film-transistors under hot-carrier stress”, J. Electrochem. Soc.,Vol.159, 3, H286-H289, 2012
        13. M.C. Wu, T.H. Wu, and T.Y. Tseng, “Robust unipolar resistive switching of Co nano-dots embedded ZrO2 thin Film memories and their switching mechanism”, J. Appl. Phys., Vol. 111,1, 014505, Jan 2012
        14. S.H. Ho, T.C. Chang, C.W. Wu, W.H. Lo, C.E. Chen, J.Y. Tsai, H.P. Luo, T.Y. Tseng, O. Cheng, C.T. Huang and S.M. Sze“Analysis of an anomalous hump in gate current after dynamic negative bias stress in HfxZr1-xO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors” Appl. Phys. Lett., 101, 052105, 2012
         “Field emission properties and reliability of ZnO nanotip current emitters”, 5th IEEE International Nanoelectronics Conference”, January 2-4, 2013, Sentosa, Singapore(invited talk and session chair)
         “Unipolar resistive switching behaviors of ZrO2 memory device”, The 8th Asian Meeting on Ferroelectrics, Pattaya, Thailand, December 9-14,2012(invited talk)
         “Electrochemical performance of manganese oxide-carbon nanotube nanocomposite pseudocapacitors”, 2012 Energy Materials Nanotechnology Open Access Week, Chendu, China October 22-26, 2012(invited talk and session chair)
         “Metal embedded in metal oxide resistive switching memory”, 1st Annual World Congress of Advanced Materials Conference,Beijing, China, June 6-8, 2012(invited talk and session chair)
         “Perovskite oxides for resistive switching memory application”, 7th Microwave Materials and Their Applications in Taipei, Taiwan, June 3 - 6, 2012(invited talk)
         “Properties and reliability of ZnO nanostructure current emitters”, International Conference and Workshop on Nanostructured Ceramics and others Nanomaterials (ICWNCN), Delhi, India, March 13-16, 2012(invited talk)
        T.Y.Tseng and S.M.Sze, Nonvolatile Memories: Materials, Devices and Applications(2-Vol),American Scientific Publishers, CA USA, 2012
        (一) 提供適當場所與最佳時段為講座教授授課所需。
        (二) 於本校工四館、奈米中心、國家奈米元件實驗室等提供研究空間,補助必要之研究經費。
        2012年曾前往台大材料所、台大電子所、屏東科技大學等校巡迴講座並宣揚研究教學成果。相關資料置於個人網站 http://www.ee.nctu.edu.tw/People/Professor/individual.php?TeacherID=T7215