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曾俊元(Tseung-Yuen Tseng)

工程四館 ED608
Office: (03)5731879
NCTU:(03)5712121-31879
FAX:(03)5724361
LAB: (03)5712121-54201 or -54202 or -54168
E-Mail:tseng@cc.nctu.edu.tw

個人網頁:

實驗室網頁或詳細履歷:

學經歷

研究方向

簡介

        Tseung-Yuen Tseng received his Ph.D. degree in electroceramics from the School of Materials Engineering, Purdue University, West Lafayette, USA in 1982. He was briefly associated with the University of Florida, Gainesville, before joining National Chiao-Tung University, Hsinchu, Taiwan in 1983, where he is now a University Chair Professor in the Department of Electronics Engineering and the Institute of Electronics. He was the Dean of College of Engineering(2005-2007), the Vice Chancellor and University Chair Professor of the National Taipei University of Technology, Taipei, Taiwan(2007-2009).
        Dr. Tseng’s professional interests are electronic ceramics, nanoceramics, ceramic sensors, high-k dielectric films, ferroelectric thin films and their based devices, and resistive switching memory devices. He has published over 300 research papers in refereed international journals and 110 conference papers, several book chapters, and held 28 patents. He invented the base metal multilayer ceramic capacitors, which have become large scale commercial product. He is an Editor of the Handbook of Nanoceramics and Their Based Nanodevices(5-Vol. set) and Nonvolatile Memories: Materials, Devices, and Applications(2-Vol. set), Guest Editor of a special issue of Ferroelectrics(6 Volumes), an Associate Editor of the Journal of Nanoscience and Nanotechnology, Advanced Science Letters and International Journal of Applied Ceramic Technology. He is Member of Board of Asia Ferroelectrics Association and General Chair of The 6th Asian Meeting of Ferroelectrics. He is a Chairperson, Session Chair, Keynote and Invited Speaker, and Member of Advisory Committee of many National and International Meetings. Dr. Tseng has received Distinguished Research Award from the National Science Council (1995-2001), Hou Chin-Tui Distinguished Honor Award (2002), Dr. Sun Yat-Sen Academic Award (2003), TECO Technology Award (2004), IEEE CPMT Exceptional Technical Achievement Award (2005), Distinguished Research Award of Pan Wen Yuan Foundation (2006) , Academic Award of Ministry of Education (2006), Medal of Chih-Hung Lu(2010), and National Endowed Chair Professor(2011) . He was elected a Fellow of the American Ceramic Society in 1998, IEEE Fellow in 2002 and MRS-T Fellow in 2009.
        
        
        曾俊元教授執行101年度國家講座成果報告表
        該學年度國家講座執行情形:
        一、教學課程綱要
        本人本學年開授電子材料與薄膜技術及分析兩門課,在電子材料課程以介紹電子材料的製程,缺陷結構,擴散及電學性質為主,讓同學了解缺陷結構的種類,形成原因,
        缺陷方程式的寫法,缺陷與擴散及電學性質相互關係,擴散與結構,溫度和活化能的關係,離子和電子的電導度,電化學勢能,非線性電子陶瓷等。在薄膜技術及分析課程以介紹薄膜沉積,表面能,固態擴散,薄膜應力,表面動力過程,均質壘晶,非均質壘晶,固態結晶化為主,讓同學了解薄膜沉積技術,成膜的要素及原因,薄膜應力與應變之關係,應力體的化學勢能,膜形成的動力學,均質壘晶與非均質壘晶成長技術。此兩課程開設於研究所,同學修完此課後可對電子材料與薄膜的基礎及技術有進一步的了解。
        
        二、研究重點及方向
        本年度計畫(2012.1-2013.1)本研究團隊發表國際知名學術期刊論文十四篇,茲將重要研究成果概要說明如下:
        1. 在電阻式記憶體方面,使用緩衝層將記憶體的單極式轉換的維持時間增長,使其具使用價值,並對其延長機制提出解釋。並採用鉻奈米粒子於電阻轉換層,來降低其轉換電壓使可靠的單極轉換變的可能而且解釋其原因。另使用鋅氧化物奈米線來製作電阻式記憶體,為透明電子提供基礎研究。
        2. 在場發射顯示器方面,使用鎵添加及氧電漿蝕刻技術,製作具奈米尖端的鋅氧化物奈米線來製作場發射顯示器,可得到低啟動電壓及高可靠度的場發射元件。
        3. 在光感測器方面,使用鋅氧化物奈米線成長於透明塑膠基板來製作UV光感測元件,可得高感測性及靈敏的效果。
        
        發表論文 (2012)
        
        1. I.C. Yao, P. Lin, and T.Y. Tseng, “Field-emission properties and reliability of ZnO nanorod, nanopagoda, and nanotip current emitters”, IEEE Trans. On Nanotechnology, Vol.11, No.4, pp.746-750, July 2012
        
        2. I. C. Yao, P. Lin, S.H. Huang and T.Y. Tseng, “Electrical properties and reliability of ZnO-based nanorod current emitters”, IEEE Trans. On CPMT,Vol.2, No.7, pp.1143-1150, July 2012
        
        3. D.Y. Lee and T.Y. Tseng, “Unipolar resistive switching characteristics of a ZrO2 memory device with oxygen ion conductor buffer layer”, IEEE Electron Device Letters, Vol.33, No.6, 803-805, 2012
        
        4. K.P. Jayadevan and T.Y. Tseng, “One-dimensional ZnO nanostructures”, Journal of Nanoscience and Nanotechnology, 12, 4409-4457,2012
        
        5. M.C. Wu, W.Y. Jang, C.H. Lin, and T.Y. Tseng, “A study on low-power,nanosecond operation and multilevel bipolar switching in Ti/ZrO2/pt nonovolatile memory with 1T1R architecture”, Semicond. Sci. Technology, 27, 065010, 2012
        
        6. T.Y. Tseng and S.M. Sze, “An introduction to nonvolatile memories’ in “Nonvolatile Memories: Materials, Devices, and Applications”, Edited by T.Y. Tseng and S.M. Sze, pp.1-9, Am.Scientific Publishers, CA, 2012
        
        7. D.Y. Lee, I.C. Yao, and T.Y. Tseng, “Bottom electrode modification of ZrO2 resistive switching memeory device with Au nanodots”, J.J. Appl. Phys.,51, 02BJ04, 2012
        
        8. I.C. Yao, T.Y. Tseng, and P. Lin, “ZnO nanorods grown on polymer substrates as UV photodetectors”, Sensors and Actuators A, Physical, 178,26,Feb.11, 2012
        
        9. T.Y. Tseng, “ZnO nanostructures for sensor applications”, Solid State Phenomena, Vol.185, pp.1-4, 2012
        
        10. I.. Yao, D.Y. Lee, T.Y. Tseng and P. Lin, “Fabrication and resistive switching characteristics of high compact Ga-doped ZnO nanorod thin film devices”, Nanotechnology, Vol.23, 14, 145201, Apr. 2012
        
        11. D. Panda, C.Y. Huang, T.Y. Tseng, “Resistive switching characteristics of nikel silicide layer embedded HfO2 film”, Appl. Phys. Lett., Vol.100, 11, 112901, Mar. 2012
        
        12. W.F. Chung, T.C. Chang, C.S. Lin, K.J. Tu, H.W. Li, T.Y. Tseng, Y.C. Chen and Y.H. Tai, “Oxygen-adsorption-induced anomalous capacitance degradation in amorphous indium-gallium-zinc-oxide thin-film-transistors under hot-carrier stress”, J. Electrochem. Soc.,Vol.159, 3, H286-H289, 2012
        
        13. M.C. Wu, T.H. Wu, and T.Y. Tseng, “Robust unipolar resistive switching of Co nano-dots embedded ZrO2 thin Film memories and their switching mechanism”, J. Appl. Phys., Vol. 111,1, 014505, Jan 2012
        
        14. S.H. Ho, T.C. Chang, C.W. Wu, W.H. Lo, C.E. Chen, J.Y. Tsai, H.P. Luo, T.Y. Tseng, O. Cheng, C.T. Huang and S.M. Sze“Analysis of an anomalous hump in gate current after dynamic negative bias stress in HfxZr1-xO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors” Appl. Phys. Lett., 101, 052105, 2012
        
        另外2012年曾前往美國、印度、泰國、阿拉伯、大陸、新加坡等地開會,其中邀請演講為:
        
         “Field emission properties and reliability of ZnO nanotip current emitters”, 5th IEEE International Nanoelectronics Conference”, January 2-4, 2013, Sentosa, Singapore(invited talk and session chair)
         “Unipolar resistive switching behaviors of ZrO2 memory device”, The 8th Asian Meeting on Ferroelectrics, Pattaya, Thailand, December 9-14,2012(invited talk)
         “Electrochemical performance of manganese oxide-carbon nanotube nanocomposite pseudocapacitors”, 2012 Energy Materials Nanotechnology Open Access Week, Chendu, China October 22-26, 2012(invited talk and session chair)
         “Metal embedded in metal oxide resistive switching memory”, 1st Annual World Congress of Advanced Materials Conference,Beijing, China, June 6-8, 2012(invited talk and session chair)
         “Perovskite oxides for resistive switching memory application”, 7th Microwave Materials and Their Applications in Taipei, Taiwan, June 3 - 6, 2012(invited talk)
         “Properties and reliability of ZnO nanostructure current emitters”, International Conference and Workshop on Nanostructured Ceramics and others Nanomaterials (ICWNCN), Delhi, India, March 13-16, 2012(invited talk)
        
        在2012年曾編著一部書為
        T.Y.Tseng and S.M.Sze, Nonvolatile Memories: Materials, Devices and Applications(2-Vol),American Scientific Publishers, CA USA, 2012
        
        三、學校資源配合狀況
        (一)學校對於講座主持人教學研究各項資源配合內容
        
        (一) 提供適當場所與最佳時段為講座教授授課所需。
        
        (二) 於本校工四館、奈米中心、國家奈米元件實驗室等提供研究空間,補助必要之研究經費。
        
        (二)國家講座開設跨校性選修課程、辦理全國巡迴講座並宣揚研究教學成果情形
        2012年曾前往台大材料所、台大電子所、屏東科技大學等校巡迴講座並宣揚研究教學成果。相關資料置於個人網站 http://www.ee.nctu.edu.tw/People/Professor/individual.php?TeacherID=T7215
        
        四、執行效益自我評估
        我覺得因得國家講座在各方面均有助益,邀請演講以及審查案件均增多,因出席國外會議機會增加,和國外學者交流有助於提升研發水準。
        
        五、檢討與建議
        近年來博士班的程度與就學意願均降低,應鼓勵優秀學生就讀博士班。